Strategy Analytics reports that the GaAs industry is creating innovations designed to stave off the dual challenges of integration and low-cost silicon technologies. Newer BiFET and BiHEMT processes will enable GaAs device manufacturers to integrate HBT power amplifiers onto a single die with HEMT-based switches and other functions. Meanwhile, the use of optical lithography for production of smaller geometry processes will enable more cost-effective production of millimeter-wave ICs. But HBT and HEMT processes will continue to underpin the commercial market for GaAs devices which will be worth $4 - $5 billion by 2013, as stated in the latest Strategy Analytics study.
�BiFET and BiHEMT technologies will enable the development of a future class of products, providing integrated solutions that retain the industry-leading performance offered by GaAs and necessary for next-generation wireless markets,� noted Steve Entwistle, VP of Strategy Analytics� Strategic Technologies Practice.
�GaAs is still erroneously perceived by many as an exotic, expensive technology,� said Asif Anwar, Director of the Strategy Analytics GaAs and Compound Semiconductor Technologies Service. �The reality is that GaAs technologies continue to meet the requirements from cost-sensitive markets, such as cellular handsets and is the most cost-effective technology for markets that require millimeter-wave performance.�
Mr. Anwar concluded, �The application of optical lithography for millimeter-wave IC production will significantly enhance the cost-effectiveness of GaAs compared to silicon technology-based offerings, while retaining the benefits of performance and faster time-to-market.�
How much progression do you think GaAs BiFET and BiHEMT processes are making to fend off Si improvements in integration and lower cost?
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